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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2023 DESCRIPTION With TO-220C package Complement to type 2SB1033 Low collector saturation voltage APPLICATIONS Low frequency power amplifiers Power drivers DC-DC converters PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 80 Collector-base voltage Open emitter Collector-emitter voltage Open base 60 6 3 1 TC=25ae 40 150 -50~150 Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature Open collector Emitter UNIT V V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA; IB=0 IC=50|I IE=50|I A; IE=0 A; IC=0 MIN 60 80 6 2SD2023 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT TYP. MAX UNIT V V V IC=2A; IB=0.2A IC=2A; IB=0.2A VCB=60V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V 60 1.0 1.5 10 10 320 |I |I V V A A hFE Classifications D 60-120 E TOR NDU ICO E SEM ANG INCH Collector output capacitance IE=0 ; VCB=10V;f=1MHz 70 8 Transition frequency IC=0.5A ; VCE=5V pF MHz F 100-200 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2023 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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